Memory effect in silicon nitride deposition using ICPCVD technique
| Autor: | Seema Vinayak, Sumsullah Khan, Rajeev Sanwal, Dipendra Singh Rawal, Hitendra K. Malik, Sunil Kumar |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Passivation business.industry 020208 electrical & electronic engineering 02 engineering and technology 01 natural sciences Silane Elastic recoil detection chemistry.chemical_compound chemistry Silicon nitride Plasma-enhanced chemical vapor deposition Ellipsometry 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Surface roughness Deposition (phase transition) Optoelectronics business |
| Zdroj: | Journal of Theoretical and Applied Physics. 13:299-304 |
| ISSN: | 2251-7235 2251-7227 |
| Popis: | In this study, a plasma-based low-temperature, low-pressure SiN film deposition is investigated for device applications. Ammonia, nitrogen and silane are being used for optimization of the quality of SiN film for device passivation by ICPCVD. Characterization of SiN film is done using elastic recoil detection analysis, AFM, FTIR and ellipsometry. The effect of previous process parameters on subsequent process is called memory effect, which has been investigated by all the characterization techniques. During deposition, this effect has been observed for the same parameters that are used to maintain the stoichiometry of the film. It has been observed that some of the residues of gases used for SiN deposition remain present even after the deposition in the chamber and are carried over for the next deposition process and alter the film property, though parameters such as flow rate, temperature, pressure and time remain fixed. This memory effect alters the film surface roughness and stoichiometry thus affecting device characteristics after passivation. |
| Databáze: | OpenAIRE |
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