GaAs diodes for TiT2-based betavoltaic cells

Autor:	A. V. Zdoroveyshchev, Yu. A. Danilov, P. S. Vergeles, P. B. Demina, V. P. Lesnikov, M. V. Ved, O. V. Vikhrova, Eugene B. Yakimov, B. N. Zvonkov, M. V. Dorokhin, I. L. Kalentyeva
Rok vydání:	2022
Předmět:	Betavoltaics Radiation Materials science Semiconductor business.industry Electron beam-induced current Schottky diode Optoelectronics business Deposition (law) Diode Surface states Pulsed laser deposition
Zdroj:	Applied Radiation and Isotopes. 179:110030
ISSN:	0969-8043
DOI:	10.1016/j.apradiso.2021.110030
Popis:	The GaAs semiconductor structures for the application as betavoltaic power sources were investigated. Three types of structures underwent a comparative study: a Schottky diode, a p-n junction and Schottky structure modified by deposition of a carbon layer. The power characteristics were estimated by Monte-Carlo simulation and collected current calculation using parameters obtained from the electron beam induced current technique. It was shown that carbon deposition on the top of n-GaAs allows passivating the surface states and thus improving betavoltaic performance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c0cab3c8db0822cde3a0159546e6aad8 https://doi.org/10.1016/j.apradiso.2021.110030 Zobrazit plný text záznamu Full Text from ScienceDirect