Formation and Chemical Selectivity of Partially Ga-Terminated Si(111) Surfaces

Autor:	Yukihiro Kusumi, Ken Fujita, Masakazu Ichikawa
Rok vydání:	1998
Předmět:	Materials science Nanostructure Analytical chemistry Thermal desorption chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Oxygen Surfaces Coatings and Films chemistry.chemical_compound Adsorption Antimony chemistry Materials Chemistry Molecule Disilane Selectivity
Zdroj:	Surface Review and Letters. :665-673
ISSN:	1793-6667 0218-625X
DOI:	10.1142/s0218625x9800102x
Popis:	Nanoscale stripes of the Si(111)-(7 × 7) structure with atomic accuracy can be formed on the [Formula: see text]-terminated Si(111) surface, by selective thermal desorption of Ga atoms from step edges, when the surface is tilted toward the [Formula: see text] direction. The nanoscale stripes of the 7 × 7 structure can also be formed in expected areas by selective thermal desorption of Ga atoms induced by STM stimulation. A Ga-terminated area is found to be chemically less active for adsorption of oxygen, disilane and antimony molecules which selectively react in the 7 × 7 area. By using the chemical selectivity and the nanoscale 7 × 7 stripe for formation method, a stripe pattern with the antimony-adsorbed 7 × 7 areas and [Formula: see text] areas is produced as a demonstration of nanostructure formation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c052148b55edd2d65b4015c5e261f0a9 https://doi.org/10.1142/s0218625x9800102x Zobrazit plný text záznamu