Freestanding two inch c‐plane GaN layers grown on (100) γ‐lithium aluminium oxide by hydride vapour phase epitaxy

Autor:	Reinhard Uecker, P. Reiche, K. Peters, Steffen Ganschow, Ch. Hennig, Günther Tränkle, Ute Zeimer, Marcus Weyers, Eberhard Richter
Rok vydání:	2006
Předmět:	Materials science Plane (geometry) Analytical chemistry chemistry.chemical_element Nanotechnology Substrate (electronics) Condensed Matter Physics chemistry.chemical_compound chemistry Hydride vapour phase epitaxy Aluminium oxide Wafer Lithium Layer (electronics)
Zdroj:	physica status solidi c. 3:1439-1443
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.200565278
Popis:	(100) γ-lithium aluminium oxide substrates of two inch diameter were fabricated from crystals grown by the Czochralski technique. Onto these substrates c-plane GaN with a thickness of about 200 µm has been grown by hydride vapour phase epitaxy in a horizontal AIX HVPE reactor. The GaN layer spontaneously separates from the bottom lithium aluminium oxide substrate during the cool-down resulting in complete freestanding 2 inch GaN wafers. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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