A semi-empirical model for the field-effect mobility of hydrogenated polycrystalline-silicon MOSFETs
| Autor: | Shunji Seki, Osamu Kogure, Bunjiro Tsujiyama |
|---|---|
| Rok vydání: | 1988 |
| Předmět: |
Semi empirical model
Electron mobility Materials science Silicon business.industry Electrical engineering Analytical chemistry Field effect chemistry.chemical_element engineering.material Grain size Electronic Optical and Magnetic Materials Polycrystalline silicon chemistry engineering Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 35:669-674 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/16.2511 |
| Popis: | The quantitative relationship between field-effect mobility ( mu /sub FE/) and grain-boundary trap-state density (N/sub t/) in hydrogenated polycrystalline-silicon (poly-Si) MOSFETs is investigated. The focus is on the field-effect mobility in MOSFETs with N/sub t/ 1*10/sup 2/ cm/sup -2/. It is found that reducing N/sub t/ to as low as 5*10/sup 11/ cm/sup -2/ has a great impact on mu /sub FE/. MOSFETs with the N/sub t/ of 4.2*10/sup 11/ cm/sup -2/ show an electron mobility of 185 cm/sup 2//V-s, despite a mean grain size of 0.5 mu m. The three principal factors that determine mu /sub FE/, namely, the low-field mobility, the mobility degradation factor, and the trap-state density N/sub t/ are clarified. > |
| Databáze: | OpenAIRE |
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