Real‐time feedback for sidewall profile control in reactive ion etching
| Autor: | Michael E. Elta, J. Freudenberg, B.A. Rashap |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Fabrication
Plasma etching Chemistry business.industry technology industry and agriculture Process (computing) Nanotechnology Surfaces and Interfaces Plasma Condensed Matter Physics Surfaces Coatings and Films Etching (microfabrication) Control system Optoelectronics Microelectronics Reactive-ion etching business |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:1792-1796 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.579770 |
| Popis: | Reactive ion etching is an important process in the fabrication of microelectronic devices. This article reports on work in progress towards developing a strategy for controlling sidewall profile during this process. In this strategy, a response surface is developed between plasma characteristics and etch rate components. This is then used to determine the plasma properties necessary to achieve a desired sidewall profile. Finally, a real‐time feedback controller is used to regulate the plasma to these conditions during an etch. Presented in this article are preliminary experimental results towards implementing such a strategy. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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