Mechanism of the Semiconductor–Metal Phase Transition in Sm1–xGd x S Thin Films
| Autor: | S. M. Soloviev, N. V. Sharenkova, V. V. Kaminsky, G. D. Khavrov |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Phase transition Materials science business.industry Semiconductor properties Analytical chemistry Flash evaporation 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Metal Semiconductor visual_art 0103 physical sciences visual_art.visual_art_medium Crystallite Thin film Film material 0210 nano-technology business |
| Zdroj: | Semiconductors. 52:41-43 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782618010116 |
| Popis: | The influence of the Gd content on the semiconductor–metal phase transition in polycrystalline Sm1–xGd x S thin films produced by the flash evaporation of a powder in vacuum is studied. It is shown that the basic factor of the physical mechanism of the phase transition is compression of the film material. It is established that the films retain their semiconductor properties only up to a Gd content of x = 0.12. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|