Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates

Autor:	Timur Malin, Denis Milakhin, Vladimir Mansurov, Vladimir Vdovin, Anton Kozhukhov, Ivan Loshkarev, Ivan Aleksandrov, Dmitry Protasov, Konstantin Zhuravlev
Rok vydání:	2022
Předmět:	Inorganic Chemistry Materials Chemistry Condensed Matter Physics
Zdroj:	Journal of Crystal Growth. 588:126669
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2022.126669
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bfb5c1e2ad3f4ae50d18b6929065df76 https://doi.org/10.1016/j.jcrysgro.2022.126669 Zobrazit plný text záznamu Full Text from ScienceDirect