Heteroepitaxial growth of erbium carbide on boron doped homoepitaxial diamond (100) films
| Autor: | F. Pruvost, C. Saby, G. Patrat, Pierre Muret |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
Mechanical Engineering Material properties of diamond Analytical chemistry Mineralogy Diamond General Chemistry engineering.material Epitaxy Electronic Optical and Magnetic Materials Vacuum evaporation Carbide X-ray photoelectron spectroscopy Materials Chemistry engineering Diamond cubic Electrical and Electronic Engineering Thin film |
| Zdroj: | Diamond and Related Materials. 11:1332-1336 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/s0925-9635(01)00652-5 |
| Popis: | The erbium carbide formation on homoepitaxial C(100) diamond thin films has been studied by low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), grazing-incidence X-ray diffraction (GIXD) and Raman spectroscopy. Diamond films, 2.5 μm thick, are grown by microwave plasma chemical vapor deposition (MWCVD) and p-type doped (10 17 B/cm 3 ) in the vapor phase. Carbide formation is monitored on two different films: either erbium is evaporated under ultra high vacuum (UHV) on a free diamond surface and this step is followed by an anneal; or a reactive deposition is performed at 750 °C under 5×10 −6 mbar of CH 4 on a hydrogenated diamond surface. After annealing up to 850 °C, the reaction is not complete in the first deposit and only a fraction of erbium atoms forms carbide. On the contrary, a heteroepitaxial dicarbide layer is grown when methane pressure is used. GIXD measurements performed on this latter type of film show that the (100) plane ErC 2 is parallel to the C(100) plane but the carbide lattice is rotated 45° in comparison with the diamond lattice, corresponding to a [110] ErC 2 //[100] C epitaxial relationship. |
| Databáze: | OpenAIRE |
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