Two-dimensional silicon phosphide: low effective mass and direct band gap for future devices applications
| Autor: | Sanjeev K. Gupta, Prabal Dev Bhuyan, Yogesh Sonvane, Shivam Kansara |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Electron mobility
Materials science Silicon business.industry 020502 materials Mechanical Engineering Stress–strain curve chemistry.chemical_element 02 engineering and technology Effective mass (solid-state physics) 0205 materials engineering chemistry Mechanics of Materials Electric field Monolayer Optoelectronics General Materials Science Direct and indirect band gaps business Electronic band structure |
| Zdroj: | Journal of Materials Science. 54:11878-11888 |
| ISSN: | 1573-4803 0022-2461 |
| DOI: | 10.1007/s10853-019-03753-9 |
| Popis: | The band engineering using strain and electric field of monolayer silicon phosphide (2D-SiP) has been investigated by first-principle calculation. The biaxial strain is used to tune the electronic band gap from 1.91 to 0.7 eV by applying compressive strain 0–10% and 1.91–1.0 eV by tensile strain from 0 to 12%. Furthermore, SiP shows metallic behaviour beyond 12% of compressive strain and 14% of tensile strain. However, the negligible effect of the external electric field on the electronic band structure of 2D SiP shows the sustainability of the monolayer. The stress vs strain curve shows the excellent mechanical stability of the monolayer SiP. 2D SiP also shows low electron effective mass for higher carrier mobility. Further, optical properties of the monolayer show the UV region absorption. Our results provide insights to possible mechanical tuning of SiP monolayer by applying external strain for nano-electronic and nano-optoelectronic device application. |
| Databáze: | OpenAIRE |
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