A triple-node intrinsic stacking fault/nanotwin/extrinsic stacking fault in a small GaAs island grown on a Si(001) substrate

Autor:	M. Loubradou
Rok vydání:	1996
Předmět:	Crystallography Materials science Condensed matter physics Macle Stacking Substrate (electronics) Dislocation Condensed Matter Physics Epitaxy Crystallographic defect Molecular beam epitaxy Stacking fault
Zdroj:	Philosophical Magazine Letters. 74:1-8
ISSN:	1362-3036 0950-0839
DOI:	10.1080/095008396180498
Popis:	The defect content of small GaAs islands grown by molecular-beam epitaxy on a Si (001) substrate is investigated using high-resolution electron microscopy. The smallest non-defect-free islands contain stair-rod dislocations (SRDs) with Burgers vectors 1/6 [110] or 1/3 [110] linked to intrinsic stacking faults (ISFs) or extrinsic stacking faults (ESFs). When two SRDs are simultaneously present, they can interact to form an ultrathin twin in GaAs so that a triple-line ISF/nanotwin/ESF can form, along which an edge 1/3 [001] dislocation is present. A mechanism is proposed to interpret the triple node, based on the formation of planar defects produced by emission from the free surface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bec2fc6003ab9f2706772fc1d3fa264c https://doi.org/10.1080/095008396180498 Zobrazit plný text záznamu