Scalability of a trench capacitor cell for 64 Mbit DRAM
| Autor: | Masaaki Yashiro, Randy Mckee, P.S.-H. Ying, C.W. Teng, Gishi Chung, Ih-Chin Chen, Donald J. Coleman, Bing-Whey Shen |
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| Rok vydání: | 2003 |
| Předmět: |
Dynamic random-access memory
Materials science business.industry Electrical engineering Equivalent oxide thickness Hardware_PERFORMANCEANDRELIABILITY law.invention Capacitor Hardware_GENERAL law Shallow trench isolation Trench Hardware_INTEGRATEDCIRCUITS Optoelectronics business Dram Diode Leakage (electronics) |
| Zdroj: | International Technical Digest on Electron Devices Meeting. |
| Popis: | The authors address cell leakage issues and conclude that a unique field-plate isolated trench capacitor cell structure, already demonstrated at the 16-Mb level with over 1 s of data retention (50% bit fail measured at 90 degrees C), is scalable to 64-Mb DRAM (dynamic RAM). As the trench size is reduced to 0.6 mu m, the trench curvature helps reduce the trench-to-trench punch-through leakage. Substrate concentration of approximately 10/sup 17/ cm/sup -3/ is sufficient to suppress the punch-through current with a 0.5- mu m trench spacing. Diode and gate-induced breakdown voltages remain well above the operating voltage. Trench capacitor dielectric is scalable to less than 5-nm equivalent oxide thickness. > |
| Databáze: | OpenAIRE |
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