Atomic layer deposition of titanium dioxide films using a metal organic precursor (C12H23N3Ti) and H2O (DI water)
| Autor: | Suhyeon Park, Seung-Wook Han, Namgue Lee, Jaiwon Song, Taehun Park, Hyeongtag Jeon, Byunguk Kim, Hohoon Kim, Dahyun Lee, Hyunwoo Park |
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| Rok vydání: | 2021 |
| Předmět: |
Anatase
Materials science Mechanical Engineering Metals and Alloys Analytical chemistry 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Atomic layer deposition chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Mechanics of Materials Rutile Titanium dioxide Materials Chemistry Deposition (phase transition) Thin film 0210 nano-technology High-κ dielectric |
| Zdroj: | Journal of Alloys and Compounds. 857:157931 |
| ISSN: | 0925-8388 |
| DOI: | 10.1016/j.jallcom.2020.157931 |
| Popis: | We investigated the deposition of titanium dioxide (TiO2) thin films. TiO2 thin films were deposited using flow-type atomic layer deposition (ALD) and the new MAP Ti (C12H23N3Ti) precursor and deionized water (DI) as a reactant. For the deposition of TiO2 thin films using the new Ti precursor and DI, the ALD window was between 250 °C and 275 °C, which is lower than the ALD window using conventional metal organic Ti precursors. X-ray photoelectron spectroscopy (XPS) analysis showed that the Ti:O ratio was about 1:1.8. Additionally, there were almost no impurities in the thin film, confirming that TiO2 thin film was deposited with the proposed method. After heat treatment of thin films in the range of 400 °C–800 °C, X-ray diffraction (XRD) measurements were conducted. When the heat treatment was performed at 700 °C, a mixed anatase and rutile phase appeared. However, when the heat treatment was done at 800 °C, the anatase phase disappeared and only the rutile phase was obtained. Based on C–V and I–V analyses, dielectric constant values from 32 to 94 were obtained as the heat treatment temperature increased. Additionally, the leakage current was 10−5 A/cm2, which is superior to previously reported TiO2 thin films. |
| Databáze: | OpenAIRE |
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