Very high tin doping of Ga0.47In0.53As by molecular beam epitaxy

Autor:	L. C. Hopkins, S. N. G. Chu, Morton B. Panish, R. A. Hamm
Rok vydání:	1990
Předmět:	Secondary ion mass spectrometry Ion implantation Physics and Astronomy (miscellaneous) Hydride Chemistry Doping Inorganic chemistry Analytical chemistry Crystal growth Thin film Epitaxy Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 56:1137-1139
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.102542
Popis:	The incorporation of Sn into Ga0.47In0.53As grown at 450 °C by hydride source molecular beam epitaxy at concentrations ranging from about 3×1018 to 1×1021 Sn/cm3 has been investigated. Sn is a well behaved donor to about n=1020 cm−3, although increasing compensation is noted with increasing doping. At total concentrations beyond about 1020 cm−3 added Sn is not electrically active although the epitaxial quality remains high without noticeable morphology changes, defects, or precipitates, to at least 1021 Sn/cm3 .
Databáze:	OpenAIRE
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