Effect of Mechanical Stress on the Splitting of Spin Sublevels in 4H-SiC
| Autor: | A. N. Anisimov, A. M. Skomorokhov, I. D. Breev, K. V. Likhachev, E. N. Mokhov, Pavel G. Baranov, S. S. Nagalyuk, G. V. Astakhov, V. V. Yakovleva, I. P. Veishtort |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Spin states Condensed matter physics Solid-state physics Silicon Center (category theory) chemistry.chemical_element Piezoelectricity symbols.namesake chemistry.chemical_compound chemistry symbols Silicon carbide Spin (physics) Raman scattering |
| Zdroj: | JETP Letters. 114:274-278 |
| ISSN: | 1090-6487 0021-3640 |
| DOI: | 10.1134/s0021364021170057 |
| Popis: | The effect of static mechanical strain on the splitting of spin sublevels of color centers based on spin 3/2 silicon vacancies in silicon carbide at room temperature has been shown. The deformed heterointerface of the AlN/4H-SiC structure has been studied. Stresses near the heterointerface have been determined using confocal Raman spectroscopy. The spin–strain coupling constants $$\Xi = ( - 0.1 \pm 0.25)$$ GHz/strain and $$\Xi {\kern 1pt} ' = ( - 0.8 \pm 0.1)$$ GHz/strain for the V2 center in 4H-SiC have been experimentally determined for the first time using the optically detected magnetic resonance method. The results obtained can be used to control spin states in SiC by means of the controlled piezoelectric strain in AlN and to estimate the fine-structure parameter D of spin centers using Raman scattering. Such an estimate makes it possible to forecast magnetometric parameters of nanosensors based on SiC nanocrystals. |
| Databáze: | OpenAIRE |
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