Towards a Root Cause Model for the Potential-Induced Degradation in Crystalline Silicon Photovoltaic Cells and Modules
| Autor: | Raykov, A., Hahn, H., Stegemann, K.-H., Kutzer, M., Storbeck, O., Neuhaus, H., Bergholz, W. |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: | |
| ISSN: | 2998-3002 |
| DOI: | 10.4229/28theupvsec2013-4do.3.3 |
| Popis: | 28th European Photovoltaic Solar Energy Conference and Exhibition; 2998-3002 Potential-induced degradation (PID) has been emerging as a major problem for crystalline silicon photovoltaic modules in recent years. Despite the extensive research efforts in this field from numerous institutions, no unanimous model of the mechanism has been presented so far. In the current work, two hypotheses for the understanding of the PID are considered. They are both based on processes which are popular in the semiconductor industry. The first one builds on the fact that lithium ions, readily available in soda-lime glass, can drift in the solar cell and affect its operation. The second model consists of charging and grounding paths for the silicon nitride ARC. The resistance of these charge-transfer paths defines the vulnerability of a cell and module technology to PID. A semiconductor model is discussed, which fits to a multiple of experimental observations. The basic concept of this model is the formation of an inversion layer on top of the solar cell emitter due to polarization charges in the silicon nitride. Initial results related to both hypotheses are discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|