Laser Doping from PSG for Selective FSF of Screen Printed Rear-Junction n-PERT Cells
| Autor: | Singh, S., Tous, L., Choulat, P., Chen, J., Liu, R., Ma, L., Wu, X., Wang, J., Liu, Z., Duerinckx, F., Gordon, I., Szlufcik, J., Poortmans, J. |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: | |
| DOI: | 10.4229/35theupvsec20182018-2av.2.27 |
| Popis: | 35th European Photovoltaic Solar Energy Conference and Exhibition; 580-583 We report detailed studies on laser doping from phosphorus silicate glass (PSG) to form the selective front surface field (FSF) for screen printed n-type passivated emitter, totally diffused (nPERT) solar cells. All relevant parameters for the laser doping process have been characterized at different laser conditions. These include measurements of sheet resistance, specific contact resistivity, recombination losses at the passivated laser-treated and metallized surface (measured by J0n++pass and J0n++metal respectively), optical and scanning electron microscopy SEM investigations. State of the art and very low dark saturation current densities have been achieved on passivated n+, passivated laser doped (n++) and metalized surfaces while maintaining low specific contact resistivity. The developed process for selective front surface field (FSF) with chosen doping parameters has been implemented in the monofacial nPERT devices with screen printed contacts resulting in independently confirmed efficiencies up to 23%. |
| Databáze: | OpenAIRE |
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