Feasibility of 1.5µm staircase solid state photomultipliers in the AlGaSb/GaInAsSb system
| Autor: | Benoit Deveaud, M. Gauneau, J P Defars, Y. Toudic, Bertrand Lambert, B. Guenais, Y. Rouillard, R Coquille |
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| Rok vydání: | 1996 |
| Předmět: |
Photomultiplier
Chemistry business.industry Solid-state Mineralogy Quaternary compound Condensed Matter Physics Noise (electronics) Electronic Optical and Magnetic Materials chemistry.chemical_compound Ternary compound Materials Chemistry Optoelectronics Electrical and Electronic Engineering Ternary operation business Voltage Molecular beam epitaxy |
| Zdroj: | Semiconductor Science and Technology. 11:226-230 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/11/2/014 |
| Popis: | We report the growth of a staircase solid state photomultiplier structure. The device is obtained by a combination of ternary AlGaSb and quaternary GaInAsSb graded layers epitaxied on GaSb substrates, using molecular beam epitaxy. The different layers used in the structures have been individually optimized for their electrical and optical quality. A multiplication coefficient of 7, without excess noise, is estimated on a six-step device, for a maximum voltage of only 15 V. |
| Databáze: | OpenAIRE |
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