Process development for small-area GaN/AlGaN heterojunction bipolar transistors
| Autor: | S. J. Pearton, K. P. Lee, J. Han, A. P. Zhang, J. W. Lee, Fan Ren, C. R. Abenathy, G. T. Dang, J. Lopata, William Scott Hobson |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Heterostructure-emitter bipolar transistor business.industry Heterojunction bipolar transistor Bipolar junction transistor Heterojunction Surfaces and Interfaces Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films Etching (microfabrication) Optoelectronics Dry etching business Common emitter |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:1846-1849 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.1330260 |
| Popis: | A self-aligned fabrication process for small emitter contact area (2×4 μm2) GaN/AlGaN heterojunction bipolar transistor is described. The process features dielectric-spacer sidewalls, low damage dry etching, and selected-area regrowth of GaAs(C) on the base contact. The junction current–voltage (I–V) characteristics were evaluated at various stages of the process sequence and provided an excellent diagnostic for monitoring the effect of plasma processes such as chemical vapor deposition or etching. A comparison is given with large emitter-area (1.96×103 μm2) devices fabricated on the same material. The small-area devices are attractive for microwave power switching applications provided a high-yield process can be developed. |
| Databáze: | OpenAIRE |
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