Low frequency noise in 6H-SiC MOSFET's
| Autor: | W.E. Wagner, J.B. Casady, R.R. Siergiej, Anant K. Agarwal, W.C. Dillard, R.W. Johnson |
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| Rok vydání: | 1995 |
| Předmět: | |
| Zdroj: | IEEE Electron Device Letters. 16:274-276 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.790733 |
| Popis: | The noise spectra for n-channel, depletion-mode MOSFETs fabricated in 6H-SiC material were measured from 1-10/sup 5/ Hz at room temperature. Devices were biased in the linear regime, where the noise spectra was found to be dependent upon the drain-to-source bias current density. At a drain-to-source current of 50 /spl mu/A for MOSFETs with a W/L of 400 /spl mu/m/4 /spl mu/m, the measured drain-to-source noise power spectral density was found to be A/(f/sup /spl lambda//), with A being 2.6/spl times/10/sup -12/ V/sup 2/, and /spl lambda/ being between 0.73 and 0.85, indicating a nonuniform spatial trap density skewed towards the oxide-semiconductor interface. The measured Hooge parameter (/spl alpha//sub H/) was 2/spl times/10/sup -5/. This letter represents the first reported noise characterization of 6H-SiC MOSFET's. |
| Databáze: | OpenAIRE |
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