Autor: |
D. Sowada, H.Y.A Chung, G. Stareev, M. Grabherr, B. Weigl, T. Wipiejewski, K.J. Ebeling |
Rok vydání: |
1996 |
Zdroj: |
Conference on Lasers and Electro-Optics Europe. |
DOI: |
10.1364/cleo_europe.1996.cfg2 |
Popis: |
The excellent performance of vertical-cavity surface-emitting lasers (VCSELs) in the wavelength range below 1mm is largely due to the superior properties of the epitaxially grown AlAs-GaAs distributed Bragg reflectors (DBRs). For long wavelength VCSELs there is no material combination for Bragg reflectors with properties as good as AlAs-GaAs. Therefore we decided to explore the possibility of employing InP and oxidized InAlAs as high and low index material in highly reflecting Bragg mirrors at a wavelength of 1 55mm. Here we describe initial results on the oxidation of InAlAs layers. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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