Oxidation of InAlAs for Long Wavelength Vertical-Cavity Laser Diodes

Autor: D. Sowada, H.Y.A Chung, G. Stareev, M. Grabherr, B. Weigl, T. Wipiejewski, K.J. Ebeling
Rok vydání: 1996
Zdroj: Conference on Lasers and Electro-Optics Europe.
DOI: 10.1364/cleo_europe.1996.cfg2
Popis: The excellent performance of vertical-cavity surface-emitting lasers (VCSELs) in the wavelength range below 1mm is largely due to the superior properties of the epitaxially grown AlAs-GaAs distributed Bragg reflectors (DBRs). For long wavelength VCSELs there is no material combination for Bragg reflectors with properties as good as AlAs-GaAs. Therefore we decided to explore the possibility of employing InP and oxidized InAlAs as high and low index material in highly reflecting Bragg mirrors at a wavelength of 1 55mm. Here we describe initial results on the oxidation of InAlAs layers.
Databáze: OpenAIRE