| Autor: |
V. K. Gandotra, A. G. Vedeshwar, M. V. G. Padmavati, K.C. Tewari, Anupama Singh |
| Rok vydání: |
2001 |
| Předmět: |
|
| Zdroj: |
Materials Chemistry and Physics. 72:72-76 |
| ISSN: |
0254-0584 |
| DOI: |
10.1016/s0254-0584(01)00312-1 |
| Popis: |
Polarography has been used as a tool for controlling the electropolishing of p-type Bi0.5Sb1.5Te3.0 and n-type Bi2Se0.3Te2.7: 0.2 wt.% SbI3 semiconducting materials used in thermoelectric coolers at particular current density in terms of electropolished film thickness preceded by the electroetching of these materials in suitable electrolytes, by measuring the diffusion current for the reduction of Sb and Se ions at dropping mercury electrode (DME) from electropolishing electrolytes for the p-type and n-type materials respectively. In addition, I–V measurements for correlating the current density with the growth of the electropolished film for these n-type and p-type semiconductors have been carried out. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect