Suppression of Sulfur Desorption of High-Temperature Sputtered MoS2Film by Applying DC Bias

Autor:	Yuya Oyanagi, Yusuke Hibino, Hitoshi Wakabayashi, Takumi Ohashi, Naomi Sawamoto, Kentarou Matsuura, Seiya Ishihara, Atsushi Ogura
Rok vydání:	2018
Předmět:	chemistry.chemical_compound Materials science Argon chemistry Desorption Analytical chemistry chemistry.chemical_element Substrate (electronics) Partial pressure Sputter deposition Thin film Molybdenum disulfide DC bias
Zdroj:	ECS Transactions. 85:531-539
ISSN:	1938-5862 1938-6737
Popis:	In this study, sputtering deposition has been used to fabricate molybdenum disulfide (MoS2). The problem with sputtering deposition of MoS2 is desorption of S atoms from the film when the substrate is brought to high temperature in order to obtain high crystalline quality thin film. In this study, application of positive DC bias was employed to prevent S desorption even in high temperature process. It was revealed that when DC bias of +60 V is applied with respect to the substrate, with Argon partial pressure set to 0.09 Pa and RF power set to 225 W, films with S/Mo = 2.0 can be obtained even at the deposition temperature of 600°C. With S desorption suppressed by applying DC bias, sputtering deposition makes a favorable fabrication method for MoS2 and possibly other layered materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b99a8c91668e25253a64120c0375979f https://doi.org/10.1149/08513.0531ecst Zobrazit plný text záznamu