| Popis: |
In this paper, the temperature-pattern dependence (T-PD) of initial/residual carrier density, Ni, of high-speed digitally modulated uncooled semiconductor laser diode has been investigated in details. The temperature dependence (TD) of N ii has been calculated according to the TD of threshold carrier density, N th , analytically and not by the well known exponential Pankove. While the pattern dependence (PD) of N i has been calculated according to the effect of the number of “0” bits preceding the considered “1” bit, N bit , and bitrate, Brate, on the carrier density through the time interval between the “1” bits. We show, for the first time, that Ni may increase or decrease, i. e. fluctuate, with temperature of operation, T, depending on the time interval between the previous and the next “1” bits. |
