High-performance InAs quantum-dot lasers near 1.3 μm

Autor:	Yueming Qiu, Pawan Gogna, Andreas Stintz, Luke F. Lester, S. Forouhar
Rok vydání:	2001
Předmět:	Waveguide (electromagnetism) Materials science Physics and Astronomy (miscellaneous) business.industry Laser Temperature measurement Semiconductor laser theory law.invention Optics law Quantum dot laser Quantum dot Optoelectronics business Lasing threshold Quantum well
Zdroj:	Applied Physics Letters. 79:3570-3572
ISSN:	1077-3118 0003-6951
Popis:	High-performance quantum dot (QD) lasers near 1.3 μm were fabricated using four stacks of InAs QDs embedded within strained InGaAs quantum wells as an active region and a reactive-ion-etched 5-μm-ridge waveguide design. For a 1.5-mm-long cavity QD laser, ground-state continuous-wave (cw) lasing has been achieved with a single facet output power of 15 mW at temperatures as high as 100 °C, while at room temperature having a differential quantum efficiency of 55% and a single facet output power of 50 mW. The characteristic temperature T0 for ground-state cw lasing is 78 K up to our temperature measurement limit of 100 °C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b91d8e7f6366af1833e8f67ab51eddb4 https://doi.org/10.1063/1.1421428 Zobrazit plný text záznamu