| Autor: |
J. Coffin, S. Conti, Pratik P. Joshi, J. Eastman, P. Flaitz, R. Van Roijen |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference. |
| Popis: |
We report a systematic radial inspection approach using tilt SEM for wafer apex, bevel and extreme edge to understand structural evolution of floating pattern defects first detected post eSiGe deposition. This investigative method in conjunction with EDS and other such techniques can be very effective in determining point of cause and exact nature of defects, induced due to various process interactions. This in turn can help to eliminate such defects for edge yield enhancement. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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