Nanosecond Microwave Semiconductor Switches for 258…266 GHz

Autor: Nikolay Andreev, Gregory G. Denisov, S. V. Shubin, Dmitry I. Sobolev, M. A. Khozin, M. L. Kulygin, V. I. Belousov, Anton Gashturi, Evgeny Novikov, Alexander Makarov, Alexander I. Tsvetkov, Ksenia Vlasova, Andrey P. Fokin
Rok vydání: 2015
Předmět:
Zdroj: Journal of Infrared, Millimeter, and Terahertz Waves. 36:845-855
ISSN: 1866-6906
1866-6892
DOI: 10.1007/s10762-015-0182-4
Popis: Optically controlled microwave switches open the way to commutate radiation frequencies up to terahertz. The switches are based on induced photoconductivity effect in semiconductors changing properties of resonant systems they are built in. The prospective applications—plasma heating, radars, particle accelerators, and spectroscopy—often require switching rapidness up to nanoseconds and coherence of output pulse packets between each other. Our waveguide semiconductor switches seem to be the most promising to satisfy these requirements. Several working switches have been built and tested for frequency range from 258 to 266 GHz at microwave power of 25 mW. The maximum possible microwave power to be switched is expected up to several watts or even higher with special heat dissipation means. The switches demonstrate nanosecond level of performance when controlled by a 10-ns green 527-nm laser with pulse energy of about 100 nJ.
Databáze: OpenAIRE
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