Bonding silicon wafers by use of electrostatic fields followed by rapid thermal heating
| Autor: | D. Fathy, J.J. Wortman, Deren Lu |
|---|---|
| Rok vydání: | 1986 |
| Předmět: |
Materials science
Silicon Mechanical Engineering Oxide chemistry.chemical_element Mineralogy Adhesion Condensed Matter Physics chemistry.chemical_compound chemistry Mechanics of Materials Transmission electron microscopy Anodic bonding Electric field General Materials Science Wafer Composite material Voltage |
| Zdroj: | Materials Letters. 4:461-464 |
| ISSN: | 0167-577X |
| Popis: | A new approach for bonding two silicon wafers together is described. This approach includes an electrostatic adhering followed by a rapid thermal bonding (RTB) process. The electrostatic adhering of the wafer pair is achieved by applying a small voltage across the wafers. Prior to thermal bonding, no mechanical pressure is needed. Complete bonding can occur using the electrostatic force together with RTB processes in a range of temperatures between 1000 and 1200°C in less than 200 s on two silicon wafers that have thermal oxide thicknesses ranging from native to 50 nm on either or both wafers. Transmission electron microscopy (TEM) observation shows that following the RTB process the two oxide layers which originally and respectively belonged to the two wafers have bonded with no distinguishable joint. |
| Databáze: | OpenAIRE |
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