Optical Properties and Lasing in (In, Al)GaN Structures
| Autor: | J. B. Lam, Jerzy S. Krasinski, T. Sugahara, S. K. Shee, J. J. Song, B. D. Little, Hua-Shuang Kong, Y. H. Kwon, G. E. Bulman, Gordon Gainer, Gil Han Park, S. Bidnyk, S.J. Hwang |
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| Rok vydání: | 2001 |
| Předmět: |
Photoluminescence
Fabrication Materials science business.industry Physics::Optics Heterojunction Atmospheric temperature range Condensed Matter Physics Laser Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science law Optoelectronics Stimulated emission business Lasing threshold Diode |
| Zdroj: | physica status solidi (a). 183:105-109 |
| ISSN: | 1521-396X 0031-8965 |
| DOI: | 10.1002/1521-396x(200101)183:1<105::aid-pssa105>3.0.co;2-g |
| Popis: | We achieved low-threshold ultra-violet lasing in optically pumped GaN/AlGaN separate confinement heterostructures over a wide temperature range. Lasing modes of a single microcavity were examined from 20 to 300 K and gain mechanisms were compared to those of a thick GaN epilayer. We have also systematically studied InGaN/(In)GaN multiple quantum wells as a function of well and barrier thickness. We demonstrate that the stimulated emission threshold and photoluminescence (PL) decay time are strongly dependent on the well and barrier thickness. The experimental results indicate that the enhanced optical quality of samples with larger barrier thicknesses can he readily applied to the fabrication of InGaN/(In)GaN laser diodes. |
| Databáze: | OpenAIRE |
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