Structure, content, and properties of 64Zn+ ion hot-implanted and thermal-oxidated Si
| Autor: | O. S. Zilova, A. V. Goryachev, A. P. Sergeev, Vladimir Privezentsev, A. A. Burmistrov, A. A. Batrakov, E. P. Kirilenko |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Silicon Annealing (metallurgy) Diffusion Analytical chemistry Oxide chemistry.chemical_element Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Ion Metal chemistry.chemical_compound chemistry Impurity Phase (matter) visual_art 0103 physical sciences visual_art.visual_art_medium Electrical and Electronic Engineering |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 32:4581-4591 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-020-05199-1 |
| Popis: | The impurity cluster formation in 64Zn+ ion hot-implanted and subsequently thermal-oxidized Si substrates are studied. After implantation on sample surface and in sample near-surface layer, the metallic Zn clusters with the average size near 200 nm on sample surface and the clusters with size about 20 nm in a sample body were created. After annealing at 700 °C, there was transformation from metal Zn clusters to its oxide form such as ZnO(core)/Zn2SiO4(shell) on a sample surface and conservation of the metallic Zn phase in a sample body. We propose an explanation of this phenomenon by temperature dependence of the oxygen molecules diffusion in silicon body and zinc atom opposite moving to the sample surface during annealing. |
| Databáze: | OpenAIRE |
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