Scanning tunneling microscopy of single dye molecules on GaAs(110) surfaces
| Autor: | Sidney R. Cohen, Iftach Nevo |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Polarity (physics)
Band gap Surface photovoltage Scanning tunneling spectroscopy Analytical chemistry Spin polarized scanning tunneling microscopy Surfaces and Interfaces Condensed Matter Physics Molecular physics Surfaces Coatings and Films law.invention Gallium arsenide chemistry.chemical_compound chemistry law Materials Chemistry Scanning tunneling microscope Quantum tunnelling |
| Zdroj: | Surface Science. 583:297-309 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/j.susc.2005.03.045 |
| Popis: | Scanning tunneling microscopy and surface photovoltage images are reported for isolated dye molecules on the GaAs(1 1 0) surface. Profound differences in the molecular images are observed for different experimental conditions. Specifically, contrast variations with changing bias polarity and magnitude, and for different substrate doping type are examined. Several mechanisms are considered to describe the observations including direct and resonant tunneling, and switching of charges between molecular states in the band gap and the energy bands of the GaAs. This treatment enables both assignment of the molecular charge state polarity, and clarification of the mechanism for current flow. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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