Electrical spin injection from ZnMnSe into InGaAs-based quantum structures
| Autor: | T. Passow, Heinz Kalt, Dimitri Litvinov, B. Daniel, Michael Hetterich, D. Tröndle, Wolfgang Löffler, J. Lupaca-Schomber, Dagmar Gerthsen, J. Kvietkova |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Photon Condensed matter physics Spintronics Condensed Matter::Other business.industry Physics::Optics Optical polarization Magnetic semiconductor Electroluminescence Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Magnetic field Condensed Matter::Materials Science Quantum dot Optoelectronics business Quantum well |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 32:434-437 |
| ISSN: | 1386-9477 |
| Popis: | We report on electrical spin injection into InGaAs-based nanostructures through a semi-magnetic ZnMnSe layer in a magnetic field. We show an optical polarization degree of the electro-luminescence of up to 35% in InGaAs quantum wells and up to 14% in InGaAs quantum dots. To be able to attribute the polarization of the emitted photons to the spin alignment in the semi-magnetic layer, we have fabricated reference devices and performed all-optical measurements. |
| Databáze: | OpenAIRE |
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