Synthesis of p-type phosphorus doped ZnSe nanowires and their applications in nanodevices

Autor:	Xiaoyan Li, Lingzhi Du, Su Qing, Haipeng Zhao, Yanghua Zhang, Shanying Li, Xiangyun Liu
Rok vydání:	2015
Předmět:	Electron mobility Materials science business.industry Mechanical Engineering Photoconductivity Doping Nanowire Heterojunction Chemical vapor deposition Condensed Matter Physics Responsivity Semiconductor Mechanics of Materials Optoelectronics General Materials Science business
Zdroj:	Materials Letters. 139:487-490
ISSN:	0167-577X
DOI:	10.1016/j.matlet.2014.10.156
Popis:	High-quality phosphorus (P) doped ZnSe nanowires (NWs) were synthesized through a chemical vapor deposition (CVD) method. The p-type conductivity of P-doped ZnSe NWs was confirmed by field-effect transistors (FETs), which show the hole mobility (μh) of 0.173 cm2V−1s−1 and carrier concentration (nh) of 5.5×1019 cm−3, representing the highest value achieved for p-type ZnSe nanostructures thus far. High-performance photodetectors (PDs) were fabricated by construction of ZnSe/Si p-n heterojunction diodes, which show high responsivity (R) of 1.1×105 A/W and photoconductivity gain (G) of 2.9×105 at forward bias and fast response speed of 74/153 μs at reverse bias to the incident light. These results reveal that such P-doped ZnSe NWs are excellent candidates for optoelectronic applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b72d0703327f362642eec719079ac137 https://doi.org/10.1016/j.matlet.2014.10.156 Zobrazit plný text záznamu Full Text from ScienceDirect