The physics of heteroepitaxy of 3C–SiC on Si: role of Ge in the optimization of the 3C–SiC/Si heterointerface

Autor:	J. Calas, René Berjoan, M. Averous, A Dollet, N. Moreaud, Pierre Masri, G Chaix, M. Rouhani Laridjani, C Dupuy
Rok vydání:	1999
Předmět:	Superstructure Materials science Silicon business.industry Mechanical Engineering chemistry.chemical_element Nanotechnology Heterojunction Condensed Matter Physics Germanium compounds chemistry Mechanics of Materials Carbon source Optoelectronics General Materials Science business
Zdroj:	Materials Science and Engineering: B. :535-538
ISSN:	0921-5107
DOI:	10.1016/s0921-5107(98)00468-1
Popis:	We demonstrate that the S-correlated theory of misfit induced superstructures and its continuity criteria, defined within the framework of the elasticity theory, enables to predict the composition of buffer layers which can optimize the 3C–SiC/Si interface. The effect of incorporating Ge atoms to the carbon source is investigated and the results are compared with the experimental results.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b72b6338d2bbae51a2179e6ce719eaff https://doi.org/10.1016/s0921-5107(98)00468-1 Zobrazit plný text záznamu Full Text from ScienceDirect