Harsh photovoltaics using InGaN/GaN multiple quantum well schemes
| Autor: | Jr-Hau He, Si-Chen Lee, Tzu Chiao Wei, Meng-Lin Tsai, Yu Hsuan Hsiao, Shih Guo Yang, Der Hsien Lien |
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| Rok vydání: | 2015 |
| Předmět: |
Solar storm of 1859
Materials science Renewable Energy Sustainability and the Environment business.industry Radiation Solar energy law.invention law Photovoltaics Solar cell Radiative transfer Optoelectronics General Materials Science Electronics Electrical and Electronic Engineering business Quantum well |
| Zdroj: | Nano Energy. 11:104-109 |
| ISSN: | 2211-2855 |
| DOI: | 10.1016/j.nanoen.2014.10.013 |
| Popis: | Harvesting solar energy at extremely harsh environments is of practical interest for building a self-powered harsh electronic system. However, working at high temperature and radiative environments adversely affects the performance of conventional solar cells. To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency (+0.52%/K) and fill factor (+0.35%/K) with elevated temperature and shows excellent reliability under high-temperature operation. In addition, the GaN-based solar cell exhibits superior radiation robustness (lifetime >30 years under solar storm proton irradiation) due to their strong atomic bonding and direct-bandgap characteristics. This solar cell employing MQW nanostructures provides valuable routes for future developments in self-powered harsh electronics. |
| Databáze: | OpenAIRE |
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