Re-evaluation of energy dependence of electronic stopping cross-section for Al ions into 4H-SiC (0001)

Autor:	Tomoyoshi Mishima, Tomoaki Nishimura, Kazuhiro Mochizuki
Rok vydání:	2022
Předmět:	Physics and Astronomy (miscellaneous) General Engineering General Physics and Astronomy
Zdroj:	Japanese Journal of Applied Physics. 61:110902
ISSN:	1347-4065 0021-4922
Popis:	To apply channeled-ion implantation to cost-effective multi-epitaxial growth for 4H-SiC superjunction devices, we re-evaluated the Al-ion energy (E) dependence of the electronic stopping cross section (S e) in 4H-SiC based on the recently reported secondary-ion mass spectrometry measured depth profiles. By including the effect of stripping of the ion electrons on the E dependence of S e, we successfully reproduced the reported maximum channeled ranges of Al into 4H-SiC (0001), ranging from 0.6 μm at the implantation-energy (E 0) of 60 keV to 7.2 μm at E 0 of 8 MeV.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b55780e5920c2f1f69de07be238df158 https://doi.org/10.35848/1347-4065/ac9ade Zobrazit plný text záznamu