Environmental, Optical, and Electrical Stability Study of Solution-Processed Zinc–Tin–Oxide Thin-Film Transistors
| Autor: | G. Gonçalves, Elvira Fortunato, Joana V. Pinto, Rodrigo Martins, Pradipta K. Nayak |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Amorphous silicon
Materials science 02 engineering and technology 01 natural sciences law.invention chemistry.chemical_compound Atomic layer deposition law 0103 physical sciences Electrical and Electronic Engineering 010302 applied physics business.industry Transistor 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Threshold voltage Amorphous solid chemistry Thin-film transistor Logic gate Optoelectronics sense organs 0210 nano-technology business AND gate |
| Zdroj: | Journal of Display Technology. 7:640-643 |
| ISSN: | 1558-9323 1551-319X |
| DOI: | 10.1109/jdt.2011.2160151 |
| Popis: | In this paper, we report the environmental, optical, and gate bias stress stability of amorphous zinc-tin-oxide (ZTO) thin-film transistors (TFTs) fabricated by sol-gel spin-coating method. The ZTO TFTs showed excellent environmental and optical stability. The threshold voltage stability of ZTO TFTs was sensitive to both positive and negative gate bias stress. Maximum threshold voltage shifting of +1.9 and -3.2 V was observed under a gate bias stress of +10 and -10 V, respectively, with no significant change to subthreshold swing value. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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