| Autor: |
Kristijonas Vizbaras, Alexander Andrejew, M.-C. Amann, Stephen J. Sweeney, Alf R. Adams, Barnabas A. Ikyo, Gregory Belenky, Jerry R. Meyer, Igor P. Marko, Leon Shterengas, Timothy D. Eales, Igor Vurgaftman |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). |
| DOI: |
10.1109/cleoe-eqec.2019.8872666 |
| Popis: |
Type-I quantum well (QW) lasers based on the GaSb material system show attractive characteristics in the mid-infrared [1]. However, as the wavelength (λ) increases in the range of 2–4 μm their performance begins to deteriorate due to increasing Auger recombination [2]. In the Auger process, the energy released from an electron-hole recombination is transferred to a third carrier. In order to develop strategies to suppress Auger recombination, it is crucial to understand the magnitude and nature of the dominant Auger recombination pathway, and their dependencies on the operating λ and temperature (T). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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