| Autor: |
Sandeep Sohal, Olanrewaju S. Ogedengbe, Pathiraja A. R. D. Jayathilaka, T. H. Myers, Mark Holtz, Bobby Logan Hancock, M. Edirisooriya, Odille C. Noriega, E. G. LeBlanc, C. H. Swartz, Katherine Zaunbrecher |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC). |
| DOI: |
10.1109/pvsc.2015.7356022 |
| Popis: |
Intensity-resolved and time-resolved PL are shown to be powerful tools for analyzing recombination in epitaxial CdTe appropriate for photovoltaic applications. Non-radiative defects such as dislocations are easily mapped and quantified by confocal photoluminescence. Very low dislocation density and twin content, as well as very high luminescence efficiency and measured lifetime (450 ns), can be achieved by Se-alloying to lattice match CdTeSe to InSb substrates. Analysis suggests the bulk lifetime for epitaxial CdTeSe is in excess of 700 ns. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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