HIGHLIGHTING OF TWO TYPES OF DEFECTS IN 1300 nm PBC LASER DIODES
Autor: | B. Bauduin, D. Riviere, J. Wallon, J. Y. Boulaire |
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Rok vydání: | 1996 |
Předmět: | |
Zdroj: | Quality and Reliability Engineering International. 12:317-320 |
ISSN: | 1099-1638 0748-8017 |
DOI: | 10.1002/(sici)1099-1638(199607)12:4<317::aid-qre29>3.0.co;2-b |
Popis: | Laser diodes of PBC (p-substrate buried crescent) structure and emitting at 1300nm, were subjected to calibrated electrostatic discharges (ESD). A failure analysis was then set up using a scanning optical microscope (SOM) and has allowed the localization of the damaged zones. The comparison of the results obtained with the electro-optical characteristics has highlighted two types of complementary defects : (i) a so-called optical type defect, since the optical power is significantly reduced, although leakage current has not occurred (active layer seriously damaged) ; (ii) a so-called electrical type defect, since the leakage current increases, although the optical power is barely reduced (active layer weakly damaged). |
Databáze: | OpenAIRE |
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