Photodetector arrays from 100mm diameter InGaAs/InP epitaxial wafers

Autor:	Michael J. Lange, J.J. Sudol, J.C. Dries, P. Dixon, Marshall J. Cohen, A.R. Sugg, Gregory H. Olsen
Rok vydání:	2001
Předmět:	Photoluminescence Materials science business.industry Photodetector Substrate (electronics) Condensed Matter Physics Epitaxy Inorganic Chemistry chemistry.chemical_compound Optics chemistry Ternary compound Materials Chemistry Indium phosphide Optoelectronics Wafer business Dark current
Zdroj:	Journal of Crystal Growth. 222:693-696
ISSN:	0022-0248
Popis:	Low dark current (210 nA/cm2 at −1 V), high shunt resistance area product (0.3 MΩ cm2) photodetector arrays have been fabricated on 100 mm diameter InGaAs/InP epitaxial wafers. The lattice-matched In.53Ga.47As was deposited by organometallic vapor-phase epitaxy upon sulfur-doped InP substrates. High-quality surface appearance and good uniformity of X-ray and photoluminescence intensity and wavelength were observed. Over 360 linear arrays of 256 or 512-element devices can be obtained from these 100 mm diameter wafers and represent more than a four-fold yield increase over that obtained with current industry standard of 50 mm diameter wafers. Good results from 320×240 element InGaAs/InP focal plane arrays fabricated on 75 mm diameter substrates were also obtained.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b465a36f10c7dc6da10bba25cabbfdc0 https://doi.org/10.1016/s0022-0248(00)00939-8 Zobrazit plný text záznamu Full Text from ScienceDirect