A sub-0.5V charge pump circuit for resistive RAM (ReRAM) enabled low supply voltage nonvolatile logics and nonvoaltile processors

Autor:	Che-Wei Wu, Han-Wen Hu, Wei-how Chen, Meng-Fan Chang, Yi-Lun Lu, Jui-Yu Hung, Shin-Jang Shen, Yan-Bing Jhang, Yih-Shan Yang
Rok vydání:	2016
Předmět:	Materials science business.industry 020208 electrical & electronic engineering 0202 electrical engineering electronic engineering information engineering Charge pump Electrical engineering 02 engineering and technology business Resistive random-access memory Voltage
Zdroj:	2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
DOI:	10.1109/edssc.2016.7785278
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b3ff6fdf10e2246a1531d5d245970c2e https://doi.org/10.1109/edssc.2016.7785278 Zobrazit plný text záznamu