Growth of CuInSe2 nanowires without external catalyst by molecular beam epitaxy
| Autor: | Jennifer P. Teixeira, J. C. González, Kamal Abderrafi, Pedro M. P. Salomé, Sascha Sadewasser, H. Limborço, R-Ribeiro Andrade, Joaquim P. Leitão, Nicoleta Nicoara, D. G. Stroppa |
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| Rok vydání: | 2016 |
| Předmět: |
Photoluminescence
Materials science business.industry Chalcopyrite Nanowire 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Evaporation (deposition) 0104 chemical sciences Crystallography Tetragonal crystal system Transmission electron microscopy visual_art visual_art.visual_art_medium Optoelectronics Crystallite 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). |
| DOI: | 10.1109/pvsc.2016.7750163 |
| Popis: | We report the growth of CuInSe 2 nanowires (NWs) using an evaporation process. The NWs grow on top of an underlying CuInSe 2 polycrystalline layer that initially forms on Si(100) substrates with native SiO 2 . Reference samples grown after removal of the native oxide do not exhibit the formation of NWs. The polycrystalline base layer has a tetragonal chalcopyrite structure and is optically active as confirmed by x-ray diffraction and photoluminescence, respectively. Transmission electron microscopy confirms the composition and atomic structure of the CuInSe 2 NWs. Samples with NWs exhibit a reduced reflectance compared with reference samples, making them interesting for photovoltaic applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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