Binding energy of the free exciton in indium arsenide
| Autor: | M. J. Pullin, C. C. Phillips, P. J. P. Tang |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Condensed matter physics Condensed Matter::Other Exciton Binding energy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Spectral line Condensed Matter::Materials Science chemistry.chemical_compound chemistry Indium arsenide Anisotropy Electronic band structure Adiabatic process Absorption (electromagnetic radiation) |
| Zdroj: | Physical Review B. 55:4376-4381 |
| ISSN: | 1095-3795 0163-1829 |
| DOI: | 10.1103/physrevb.55.4376 |
| Popis: | We report the 0--5 T magnetoabsorption spectra of high-quality InAs epilayers grown by molecular-beam epitaxy on GaAs. Excitonic absorption is observed at all fields, and, from the absolute energy of the magnetoexciton absorption peak, the zero-field exciton binding energy is found to be in excellent agreement with the theoretical prediction of 1.0 meV from calculations which take into account the anisotropy, degeneracy, and spin splitting of the InAs band structure. The energy shift of the magnetoexciton at high fields is found to agree with predicted shifts using the adiabatic method. |
| Databáze: | OpenAIRE |
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