Ar laser annealing of sputtered Si films for TFT applications

Autor:	L.F. Tsang, Sun Zhen, P.W. Chan, Y.W. Wong, K.Y. Tong, H.C. Cho
Rok vydání:	2002
Předmět:	Fabrication Materials science Silicon Annealing (metallurgy) business.industry chemistry.chemical_element Laser Grain size law.invention chemistry Hall effect law Thin-film transistor Electronic engineering Optoelectronics Crystallite business
Zdroj:	1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings.
DOI:	10.1109/tencon.1995.496335
Popis:	We have shown that r.f. sputtered Si films crystallized by cw Ar/sup +/ laser irradiation is a suitable material for fabrication of polysilicon TFTs. Polycrystalline Si film with proper annealing condition has a high Hall mobility up to 120 cm/sup 2//V-s in p-type samples. The dependence of dark conductivity on temperature suggests that much reduced trap density in laser-annealed Si films is the reason for the high mobility, despite the fact that the grain size is only 30 nm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b368b1824527849581e7ac4a73a51dff https://doi.org/10.1109/tencon.1995.496335 Zobrazit plný text záznamu