A Transient Two-Tone RF Method for the Characterization of Electron Trapping Capture and Emission Dynamics in GaN HEMTs
| Autor: | Filipe M. Barradas, Telmo R. Cunha, Luis C. Nunes, Joao L. Gomes, Jose C. Pedro, Pedro M. Tome |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Instrumentation Amplifier Transistor Time constant 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor 01 natural sciences law.invention law Frequency separation 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Transient response Transient (oscillation) business |
| Zdroj: | 2020 IEEE/MTT-S International Microwave Symposium (IMS). |
| DOI: | 10.1109/ims30576.2020.9223802 |
| Popis: | In this paper we propose an experimental method for the characterization and extraction of the time constants associated with the charge capture and emission processes of electron-trapping phenomena observed in radio-frequency (RF) power amplifiers (PAs) based on high-electron-mobility transistors (HEMTs). The method consists in the measurement of the transient response of a GaN HEMT-based PA to a series of large-signal two-tone RF excitations with increasing frequency separation, and the successive tracking of the gradual self-biasing experienced by the PA. With little requirements in terms of instrumentation and with applicability to fully assembled PAs, this simple method provides meaningful information on the dynamics of electron trapping close to the actual operating conditions of a GaN HEMT-based PA. |
| Databáze: | OpenAIRE |
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