Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate

Autor:	V. V. Nikolaev, A. V. Chikiryaka, Ivan Shchemerov, A. I. Pechnikov, Sergey Stepanov, A. Ya. Polyakov, L. I. Guzilova, V. I. Nikolaev, M. P. Shcheglov, A. A. Vasilev
Rok vydání:	2020
Předmět:	010302 applied physics Yield (engineering) Materials science Physics and Astronomy (miscellaneous) business.industry Doping chemistry.chemical_element 02 engineering and technology Conductivity 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Capacitance Semiconductor chemistry 0103 physical sciences Optoelectronics Dislocation 0210 nano-technology business Tin
Zdroj:	Technical Physics Letters. 46:228-230
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s106378502003013x
Popis:	Epitaxial layers of a new wide-band semiconductor (α-Ga2O3 doped with tin) have been grown by chloride epitaxy on smooth and patterned substrates, which are widely used to increase the emission yield in high-efficiency LED structures based on InGaN, and studied. The properties of the obtained gallium-oxide layers have been compared. Both types of samples had n-type conductivity, but the frequency and voltage dependences of their capacitance differed. Differences in the dislocation structure of epitaxial α-Ga2O3 layers on smooth and patterned substrates have been identified by X-ray diffractometry.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b31f253530f386abe855cb3edb3a92b0 https://doi.org/10.1134/s106378502003013x Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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