Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications

Autor:	Michel Stanislawiak, Yves Mancuso, Jean-Claude Jacquet, Erwan Morvan, Zineb Ouarch, G. Callet, Benoit Mallet-Guy, Jérémy Dufraisse, Christian Dua, Stéphane Piotrowicz, Raphaël Aubry, Eric Chartier, Didier Floriot, Sylvain Delage, Marie-Antoinette Poisson, M. Oualli, Olivier Jardel, N. Sarazin
Rok vydání:	2010
Předmět:	Materials science business.industry Amplifier Optoelectronics Algan gan High-electron-mobility transistor Electrical and Electronic Engineering business Ku band Realization (systems) Monolithic microwave integrated circuit Power (physics) Electronic circuit
Zdroj:	International Journal of Microwave and Wireless Technologies. 2:105-114
ISSN:	1759-0795 1759-0787
DOI:	10.1017/s1759078710000061
Popis:	The present paper presents an overview of the AlGaN/GaN-based circuits realized over the years. Two technological processes with 0.25 and 0.7 μm gate length allowed one to address applications from L- to Ku-bands. Depending on the process development and frequency of the operation, results on hybrid or MMIC technology are presented. GaN technology is evaluated through the realization of high-power amplifiers, robust low-noise amplifiers, or power switches to prepare the next generation of Tx-Rx modules.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b30d74a1223d54e52259b01c9d46c263 https://doi.org/10.1017/s1759078710000061 Zobrazit plný text záznamu