A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's
| Autor: | S.A. Hareland, S. Jallepalli, Choh-Fei Yeap, Al F. Tasch, V.M. Agostinelli, W.-K. Shih, Christine M. Maziar, Khaled Hasnat |
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| Rok vydání: | 1996 |
| Předmět: |
Free electron model
Physics Range (particle radiation) Condensed matter physics Field (physics) Monte Carlo method Electron Carrier lifetime Electronic Optical and Magnetic Materials Computational physics Computer Science::Hardware Architecture Electric field MOSFET Electrical and Electronic Engineering |
| Zdroj: | IEEE Transactions on Electron Devices. 43:1264-1273 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/16.506778 |
| Popis: | An energy parameterized pseudo-lucky electron model for simulation of gate current in submicron MOSFET's is presented in this paper. The model uses hydrodynamic equations to describe more correctly the carrier energy dependence of the gate injection phenomenon. The proposed model is based on the exponential form of the conventional lucky electron gate current model. Unlike the conventional lucky electron model, which is based on the local electric fields in the device, the proposed model accounts for nonlocal effects resulting from the large variations in the electric field in submicron MOSFET's. This is achieved by formulating the lucky electron model in terms of an effective-electric field that is obtained by using the computed average carrier energy in the device and the energy versus field relation obtained from uniform-field Monte Carlo simulations. Good agreement with gate currents over a wide range of bias conditions for three sets of devices is demonstrated. |
| Databáze: | OpenAIRE |
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