Hydrogen-Sensing Properties of a Pd/AlGaN/GaN-Based Field-Effect Transistor Under a Nitrogen Ambience

Autor:	Po-Cheng Chou, Huey-Ing Chen, Jian-Kai Liou, Chun-Chia Chen, Wen-Chau Liu, Chung-Fu Chang, Chi-Shiang Hsu
Rok vydání:	2013
Předmět:	Materials science Hydrogen business.industry Analytical chemistry chemistry.chemical_element Algan gan Heterojunction Nitrogen chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering Hydrogen concentration business Instrumentation
Zdroj:	IEEE Sensors Journal. 13:1787-1793
ISSN:	1558-1748 1530-437X
DOI:	10.1109/jsen.2013.2243430
Popis:	The hydrogen-sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) under a nitrogen ambience are studied in this paper. Good and stable hydrogen-sensing behaviors are obtained over the operating temperature from 30 $^{\circ}{\rm C}$ to 250 $^{\circ}{\rm C}$ . In addition, HFET shows the significant hydrogen-detecting ability under an extremely low hydrogen concentration of 10-ppb ${\rm H}_{2}/{\rm N}_{2}$ . Good transient responses are also observed even at room temperature. In addition, a small and nearly constant value of recovery time $({\approx}{\rm 20}~{\rm s})$ is acquired when the hydrogen concentration is higher than 1-ppm ${\rm H}_{2}/{\rm N}_{2}$ at room temperature. Therefore, the studied device shows a promise for high-performance, high-temperature electronics, microsensors, and microelectromechanical system applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b274c0c1fd4a3edda863ff48268cddb9 https://doi.org/10.1109/jsen.2013.2243430 Zobrazit plný text záznamu